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Plasma Enhaced Atomic Layer Deposition (PEALD)
| Model | PEALD-150s |
|---|---|
| Operating time |
SUN(00:00~24:00) MON(00:00~24:00) TUE(00:00~24:00) WED(00:00~24:00) THU(00:00~24:00) FRI(00:00~24:00) SAT(00:00~24:00) |
| Location | 86391 |
| inquiry |
Byeonghoon Lee 010-9075-5107 zxvpwr7@naver.com |
Notice
Available Time // Except 14:00 ~ 18:00 on every Tue ~ Thur.
Notice // If you want to have training for using this equipment, please contact Super-user.
Current Status // Now on operation.
PE-ALD is an equipment used for thin film deposition using plasma. Since we can control film thickness in atomic scale, this is inevitable in nanoscience and semiconductor science.
Material: TTIP(Titanium precursor)
Substrate size: 100~200mm
Substrate temperature: 300K~620K(±0.2K) at 1 Torr, in wafer
Precursor Sources: 3, heated 2 sources and H2O source
Deposition Uniformity : <±2%
Tel. +82-62-715-4703~4 / Fax. +82-62-715-4707
Copyright(c) 2014 Center for Relativistic Laser Science at IBS. All Rights Reserved.